CHA3080-98F Datasheet PDF (71 ~ 76 GHz Medium Power Amplifier)

CHA3080-98F - 71 ~ 76 GHz Medium Power Amplifier

Description

The CHA3080-98F is a three-stage monolithic Medium Power Amplifier.

This circuit includes a power detector which integrates a directional coupler, a detection diode and a reference diode to be used in differential mode.

Features

Broadband performances: 71-76GHz.
16dB linear gain.
19dBm power at 1dB compression.
20dB power detector dynamic range.
BCB layer protection.
DC bias: Vd=3.5V@Id=280mA.
Chip size 3.96x1.78x0.07mm Output Power (dBm) and Linear Gain (dB) 22 26 20 24 18 22 Pout @ 1dB comp 16 Pout @ 3dB comp 20 14 Linear Gain 18 12 16 10 14 8 12 69 70 71 72 73 74 75 76 77 78 79 Frequency (GHz) Main Electrical Characteristics Tamb. = +25°C Symbol Parameter.

Datasheet Details

Part number	CHA3080-98F
Manufacturer	UMS
File Size	504.69 KB
Description	71 ~ 76 GHz Medium Power Amplifier
Datasheet	CHA3080-98F Datasheet
Additional preview pages of the CHA3080-98F datasheet.

📁 Similar Datasheet

CHA3023 - 1-18 GHz WIDE BAND AMPLIFIER (United Monolithic Semiconductors)

CHA3023-99F - WIDE BAND AMPLIFIER (United Monolithic Semiconductors)

CHA3024-99F - 2-22GHz Low Noise Amplifier (United Monolithic Semiconductors)

CHA3024-FDB - Low Noise Amplifier (United Monolithic Semiconductors)

CHA3024-QGG - 2-22GHz Low Noise Amplifier (United Monolithic Semiconductors)

CHA3063 - 5.5-23GHz Driver Amplifier (United Monolithic Semiconductors)

CHA3063-99F - Driver Amplifier (United Monolithic Semiconductors)

CHA3090-98F - 81-86GHz Medium Power Amplifier (United Monolithic Semiconductors)

CHA3091A - DC-40GHz ATTENUATOR (United Monolithic Semiconductors)

CHA3092 - 20-33GHz Medium Power Amplifier (United Monolithic Semiconductors)

Full PDF Text Transcription

Click to expand full text

CHA3080-98F 71-76GHz Medium Power Amplifier GaAs Monolithic Microwave IC Description The CHA3080-98F is a three-stage monolithic Medium Power Amplifier. This circuit includes a power detector which integrates a directional coupler, a detection diode and a reference diode to be used in differential mode. It is dedicated to E-band telecommunication, particularly well suited for the new generation of high capacity Backhaul. The circuit is manufactured with a pHEMT process, 0.1µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form with BCB layer protection.

Published: Feb 1, 2013 |