Datasheet4U Logo Datasheet4U.com

CHA3024-FDB - Low Noise Amplifier

Description

The CHA3024-FDB is a distributed Low Noise Amplifier with Adjustable Gain Control (AGC) which operates between 2 and 22GHz.

It is designed for a wide range of applications, such as electronic warfare, X and Ku Point to Point Radio, and test instrumentation.

Features

  • Broadband performances: 2-22GHz.
  • Typical Linear Gain : 15dB.
  • Up to 30dB adjustable gain with VG2.
  • P1dB=18dBm.
  • PSAT=22dBm.
  • Typical Noise Figure NF=3dB.
  • DC bias : VD=5V@ID=100mA, VG1=-0.3V and VG2=1.7V Main Electrical Characteristics Tamb. = +25°C VD=+5V VG2=1.7V VG1 set to have IDQ=100mA Symbol Parameter Min Typ Max Unit Freq Frequency range 2 22 GHz Gain Linear Gain 15 dB NF Noise Figure 3 dB Pout Output Power @1dB comp. 18 dBm Ref. : DSCHA302.

📥 Download Datasheet

Datasheet preview – CHA3024-FDB

Datasheet Details

Part number CHA3024-FDB
Manufacturer United Monolithic Semiconductors
File Size 441.38 KB
Description Low Noise Amplifier
Datasheet download datasheet CHA3024-FDB Datasheet
Additional preview pages of the CHA3024-FDB datasheet.
Other Datasheets by United Monolithic Semiconductors

Full PDF Text Transcription

Click to expand full text
CHA3024-FDB 2-22GHz LNA with AGC GaAs Monolithic Microwave IC in SMD hermetic leadless package Description The CHA3024-FDB is a distributed Low Noise Amplifier with Adjustable Gain Control (AGC) which operates between 2 and 22GHz. It is designed for a wide range of applications, such as electronic warfare, X and Ku Point to Point Radio, and test instrumentation. The circuit is manufactured with a pHEMT process, 0.15µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in RoHS compliant SMD package. Main Features ■ Broadband performances: 2-22GHz ■ Typical Linear Gain : 15dB ■ Up to 30dB adjustable gain with VG2 ■ P1dB=18dBm ■ PSAT=22dBm ■ Typical Noise Figure NF=3dB ■ DC bias : VD=5V@ID=100mA, VG1=-0.3V and VG2=1.
Published: |