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CHA3024-QGG - 2-22GHz Low Noise Amplifier

Description

The CHA3024-QGG is a distributed Low Noise Amplifier with Adjustable Gain Control (AGC) that operates between 2 and 22GHz.

It is designed for a wide range of applications, such as electronic warfare, X-band and Ku-band Point to Point Radio, and test instrumentation.

Features

  • UMS.
  • Broadband performances: 2-22GHz 20.
  • Typical Linear Gain: 15dB 15.
  • Up to 30dB AGC with Vg2 10.
  • P1dB: 18dBm 5 0.
  • Psat: 20dBm -5.
  • OIP3: 28dBm -10.
  • Typical Noise Figure: 3dB -15.
  • DC bias: Vd=5V@Id=100mA, -20 Vg1=-0.3V and Vg2=1.7V. -25 -30 Linear Gain, Return Losses (dB) S11(dB) S22(dB) S21(dB) Noise (dB).
  • 28L QFN 5x5 0 2 4 6 8 10 12 14 16 18 20 22 24.
  • MSL3 Frequency (GHz) Main Electrical Characteristics Tamb. = +25°C S.

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Datasheet preview – CHA3024-QGG

Datasheet Details

Part number CHA3024-QGG
Manufacturer United Monolithic Semiconductors
File Size 582.50 KB
Description 2-22GHz Low Noise Amplifier
Datasheet download datasheet CHA3024-QGG Datasheet
Additional preview pages of the CHA3024-QGG datasheet.

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Full PDF Text Transcription

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CHA3024-QGG YWWG 3U6M8687SA 3U686M87SA YWWG YYWWG A3U6M6878SA AU3M668S78A YYWWG 2-22GHz LNA with AGC GaAs Monolithic Microwave IC in SMD leadless package Description The CHA3024-QGG is a distributed Low Noise Amplifier with Adjustable Gain Control (AGC) that operates between 2 and 22GHz. It is designed for a wide range of applications, such as electronic warfare, X-band and Ku-band Point to Point Radio, and test instrumentation. The circuit is manufactured using a 0.15µm gate length pHEMT process, with via holes through the substrate, air bridges and optical gate lithography. It is supplied in RoHS compliant SMD package.
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