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STN80T08 - 80A N-Channel Enhancement Mode MOSFET

Description

STN80T08 is used trench technology to provide excellent RDS(on) and gate charge.

Those devices are suitable for use as load switch or in PWM applications.

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Datasheet Details

Part number STN80T08
Manufacturer Stanson Technology
File Size 930.86 KB
Description 80A N-Channel Enhancement Mode MOSFET
Datasheet download datasheet STN80T08 Datasheet

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Full PDF Text Transcription

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STN80T08 N Channel Enhancement Mode MOSFET 80.0A DESCRIPTION STN80T08 is used trench technology to provide excellent RDS(on) and gate charge. Those devices are suitable for use as load switch or in PWM applications. PIN CONFIGURATION TO220-3L FEATURE 80V/40.0A, RDS(ON) = 8mΩ (Typ.) @VGS = 10V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability TO-220 package design STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2009, Stanson Corp. STN80T08 2011. V1 STN80T08 N Channel Enhancement Mode MOSFET 80.
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