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Dual N-Channel Enhancement Mode
STN8205
■DESCRIPTION
20V Dual N-Channel Enhancement Mode MOSFET
■FEATURE
The STN8205 is the Dual N-Channel logic enhancement mode power field effect transistor which is produced using high cell density. advanced trench technology to provide excellent RDS(ON).
This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , and low in-line power loss are needed in a very small outline surface mount package.
20V / 6.0A, RDS(ON) =21mΩ(typ.)@VGS =4.5V 20V / 5.2A, RDS(ON) =25mΩ(typ.)@VGS =2.
STN8205 Datasheet
