Datasheet4U Logo Datasheet4U.com

STN2306 - N-Channel Enhancement Mode MOSFET

Description

The STN2306 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density.

advanced trench technology to provide excellent RDS(ON).

This high density process is especially tailored to minimize on-state resistance.

📥 Download Datasheet

Datasheet Details

Part number STN2306
Manufacturer Semtron
File Size 149.05 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet STN2306 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
STN2300AS-TRG N-Channel 20V MOSFET VBsemi
STN2018 MOSFET Stanson Technology
STN210D N-Channel Enhancement Mode MOSFET STANSON
STN2120 Multiprotocol OBD to UART Interpreter OBD Solutions
STN2222 NPN Silicon Transistor AUK

Other Datasheets by Semtron

Part Number Description
STN2300 N-Channel Enhancement Mode MOSFET
STN2300A N-Channel Enhancement Mode MOSFET
STN2302 N-Channel Enhancement Mode MOSFET
STN2342 N-Channel Enhancement Mode MOSFET
STN2342A N-Channel Enhancement Mode MOSFET

Full PDF Text Transcription

Click to expand full text
N-Channel Enhancement Mode MOSFET STN2306 30V N-Channel Enhancement Mode MOSFET ■DESCRIPTION ■FEATURE The STN2306 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density. advanced trench technology to provide excellent RDS(ON). This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , and low in-line power loss are needed in a very small outline surface mount package. ‹ 30V/3.6A, RDS(ON)= 45mΩ(typ.)@VGS= 10V ‹ 30V/2.8A, RDS(ON)= 55mΩ(typ.)@VGS= 4.
Published: |