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STN2018 - MOSFET

Description

STN2018 is the N-Channel logic enhancement mode power field effect transistors which are produced using high cell density DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

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Datasheet preview – STN2018

Datasheet Details

Part number STN2018
Manufacturer Stanson Technology
File Size 1.12 MB
Description MOSFET
Datasheet download datasheet STN2018 Datasheet
Additional preview pages of the STN2018 datasheet.

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Full PDF Text Transcription

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STN2018 N Channel Enhancement Mode MOSFET 10.0A DESCRIPTION STN2018 is the N-Channel logic enhancement mode power field effect transistors which are produced using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, notbook computer power management and other battery powered circuits where high-side switching. PIN CONFIGURATION SOP-8 FEATURE 20V/10A, RDS(ON) = 10mΩ @VGS = 4.5V 20V/7A, RDS(ON) = 15mΩ @VGS = 2.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOP-8 package design PART MARKING SOP-8 STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.
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