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STN18T20 - MOSFET

Description

STN18T20 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

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Datasheet Details

Part number STN18T20
Manufacturer Stanson Technology
File Size 279.31 KB
Description MOSFET
Datasheet download datasheet STN18T20 Datasheet
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STN18T20 N Channel Enhancement Mode MOSFET 18.0A DESCRIPTION STN18T20 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as power management and other battery powered circuits where high-side switching. PIN CONFIGURATION TO-252 FEATURE l 200V/12A, RDS(ON) = 170mΩ(Typ.) @VGS = 10V l Super high density cell design for extremely low RDS(ON) l Exceptional on-resistance and maximum DC current capability l TO-252 package design PART MARKING Y: Year Code A: Date Code Q: Process Code STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.
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