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STN1810 - MOSFET

Description

STN1810 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance and provide superior switching performance.

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Datasheet Details

Part number STN1810
Manufacturer Stanson Technology
File Size 957.03 KB
Description MOSFET
Datasheet download datasheet STN1810 Datasheet
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STN1810 N Channel Enhancement Mode MOSFET 8.0A DESCRIPTION STN1810 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These applications such as notebook computer power management and other battery powered circuits where high-side switching, low inline power loss and resistance to transients are melded. PIN CONFIGURATION SOP-8 FEATURE 60V/8.0A, RDS(ON) = 140mΩ (Typ.) @VGS = 10V 60V/6.5.0A, RDS(ON) = 150mΩ @VGS = 7.
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