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STN1012 - MOSFET

Description

STN1012 is the N-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance and provide superior switching performance.

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Datasheet Details

Part number STN1012
Manufacturer Stanson Technology
File Size 278.98 KB
Description MOSFET
Datasheet download datasheet STN1012 Datasheet
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STN1012 Dual N Channel Enhancement Mode MOSFET 0.65A DESCRIPTION STN1012 is the N-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other bettery powered circuits where high-side switching, low in-line power loss, and resistance to transients are needed. PIN CONFIGURATION SOT-523 / SC-89 FEATURE � 20V/0.65A, RDS(ON) =380ohm@VGS =4.5V � 20V/0.55A, RDS(ON) =450ohm@VGS =2.5V � 20V/0.45A, RDS(ON) =800ohm@VGS =1.
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