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STN1A60 - Bi-Directional Triode Thyristor

Description

General purpose switching and phase control applications.

These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits such as fan speed and temperature modulation control, lighting control and static switching relay.

Features

  • Repetitive Peak off-State Voltage: 600V.
  • R. M. S On-State Current(IT(RMS)=1A.
  • Low on-state voltage: VTM=1.2(typ. )@ ITM.
  • Low reverse and forward blocking current: IDRM=500uA@TC=125℃.
  • Low holding current: IH=4mA (typ. ).
  • High Commutation dV/dt. STN1A60 Logic Level Bi-Directional Triode Thyristor General.

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Datasheet preview – STN1A60

Datasheet Details

Part number STN1A60
Manufacturer WINSEMI
File Size 348.39 KB
Description Bi-Directional Triode Thyristor
Datasheet download datasheet STN1A60 Datasheet
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    Features ■ Repetitive Peak off-State Voltage: 600V ■ R.M.S On-State Current(IT(RMS)=1A ■ Low on-state voltage: VTM=1.2(typ.)@ ITM ■ Low reverse and forward blocking current: IDRM=500uA@TC=125℃ ■ Low holding current: IH=4mA (typ.) ■ High Commutation dV/dt. STN1A60 Logic Level Bi-Directional Triode Thyristor General Description General purpose switching and phase control applications. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits such as fan speed and temperature modulation control, lighting control and static switching relay.
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