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STN1304 - 2A N-Channel Enhancement Mode MOSFET

Description

STN1304 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as c

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Datasheet Details

Part number STN1304
Manufacturer Stanson Technology
File Size 224.99 KB
Description 2A N-Channel Enhancement Mode MOSFET
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STN1304 N Channel Enhancement Mode MOSFET 2.0A DESCRIPTION STN1304 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management, other battery powered circuits, and low in-line power loss are required. The product is in a very small outline surface mount package. PIN CONFIGURATION SOT-323 3 D GS 12 1.Gate 2.Source 3.Drain PART MARKING SOT-323 FEATURE 20V/2.0A, RDS(ON) = 225mΩ @VGS = 4.5V 20V/1.5A, RDS(ON) = 315mΩ @VGS = 2.5V 20V/1.0A, RDS(ON) = 425mΩ @VGS = 4.
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