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STN8205D - Dual N Channel Enhancement Mode MOSFET

Description

STN8205D is the dual N-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

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Datasheet Details

Part number STN8205D
Manufacturer Stanson
File Size 351.78 KB
Description Dual N Channel Enhancement Mode MOSFET
Datasheet download datasheet STN8205D Datasheet

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STN8205D Dual N Channel Enhancement Mode MOSFET 5.0A DESCRIPTION STN8205D is the dual N-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, such as notebook computer power management and other battery powered circuits, where high-side switching is required. PIN CONFIGURATION TSOP-6 G1 D G2 STN8205 SYA FEATURE z 20V/4.0A, R =DS(ON) 30m-ohm@VGS =4.5V z 20V/3.4A, RDS(ON) =42m-ohm@VGS =2.
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