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STN8205A
Dual N Channel Enhancement Mode MOSFET
5.0A
DESCRIPTION
STN8205A is the dual N-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, such as notebook computer power management and other battery powered circuits, where high-side switching is required.
PIN CONFIGURATION TSSOP-8
D2 S2 S2 G2
FEATURE
l 20V/5.0A, RDS(ON) = 21m-ohm (Typ.) @VGS =4.5V
l 20V/3.0A, RDS(ON) =27m-ohm @VGS =2.
STN8205A Datasheet
