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STN8822 - MOSFET

Description

STN8822 is the dual N-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

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Datasheet Details

Part number STN8822
Manufacturer Stanson Technology
File Size 607.36 KB
Description MOSFET
Datasheet download datasheet STN8822 Datasheet

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STN8822 Dual N Channel Enhancement Mode MOSFET 8.0A DESCRIPTION STN8822 is the dual N-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, such as notebook computer power management and other battery powered circuits, where high-side switching is required. PIN CONFIGURATION TSSOP-8 FEATURE 20V/8.0A, RDS(ON) = 20m-ohm (Typ.) @VGS =4.5V 20V/7.0A, RDS(ON) =24m-ohm @VGS =2.5V 20V/3.0A, RDS(ON) =32m-ohm @VGS =1.
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