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STN8822A - MOSFET

Description

STN8822A is the dual N-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

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Datasheet Details

Part number STN8822A
Manufacturer Stanson Technology
File Size 729.63 KB
Description MOSFET
Datasheet download datasheet STN8822A Datasheet

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STN8822A Dual N Channel Enhancement Mode MOSFET 6.0A DESCRIPTION STN8822A is the dual N-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, such as notebook computer power management and other battery powered circuits, where high-side switching is required. PIN CONFIGURATION TSOP-6 FEATURE 20V/6.0A, RDS(ON) = 25m-ohm @VGS =4.5V 20V/5.0A, RDS(ON) =42m-ohm @VGS =2.
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