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SVGQ041R2NLS-2HF - 40V N-CHANNEL MOSFET

Datasheet Summary

Description

SVGQ041R2NLS-2HF is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology.

Features

  • Compliant with AEC-Q101 standards.
  • 255A, 40V, RDS(on)(typ. )=1.0m@VGS=10V.
  • Low gate charge.
  • Low Crss.
  • Fast switching.
  • Extreme dv/dt rated.
  • 100% avalanche tested.
  • Pb-free lead plating.
  • RoHS compliant.
  • Max. junction temperature: Tjmax. =175 ºC KEY.

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Datasheet preview – SVGQ041R2NLS-2HF

Datasheet Details

Part number SVGQ041R2NLS-2HF
Manufacturer Silan Microelectronics
File Size 430.42 KB
Description 40V N-CHANNEL MOSFET
Datasheet download datasheet SVGQ041R2NLS-2HF Datasheet
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Full PDF Text Transcription

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Silan Microelectronics SVGQ041R2NLS-2HF_Datasheet 255A, 40V N-CHANNEL MOSFET DESCRIPTION SVGQ041R2NLS-2HF is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance and high avalanche breakdown tolerance. FEATURES  Compliant with AEC-Q101 standards.  255A, 40V, RDS(on)(typ.)=1.0m@VGS=10V  Low gate charge  Low Crss  Fast switching  Extreme dv/dt rated  100% avalanche tested  Pb-free lead plating  RoHS compliant  Max. junction temperature: Tjmax.=175 ºC KEY PERFORMANCE PARAMETERS Characteristics VDS VGS(th) RDS(on),max ID Qg.typ Ratings 40 2.4~3.4 1.
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