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SVGQ046R8NLPD - 40V DUAL N-CHANNEL MOSFET

Datasheet Summary

Description

SVGQ046R8NLPD is dual N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology.

Features

  • AEC-Q101 qualified.
  • 63A, 40V, RDS(on)(typ. )=5.6m@VGS=10V.
  • Low gate charge.
  • Low Crss.
  • Fast switching.
  • Extreme dv/dt rated.
  • 100% avalanche tested.
  • Pb-free lead plating.
  • RoHS compliant.
  • Max. junction temperature: Tjmax. =175 ºC KEY.

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Datasheet Details

Part number SVGQ046R8NLPD
Manufacturer Silan Microelectronics
File Size 436.25 KB
Description 40V DUAL N-CHANNEL MOSFET
Datasheet download datasheet SVGQ046R8NLPD Datasheet
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Silan Microelectronics SVGQ046R8NLPD_Datasheet 63A, 40V DUAL N-CHANNEL MOSFET DESCRIPTION SVGQ046R8NLPD is dual N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance and high avalanche breakdown tolerance. This device is widely used in power management for UPS and Inverter Systems. S2 1 G2 2 S1 3 G1 4 8 D2 7 D2 6 D1 5 D1 FEATURES  AEC-Q101 qualified  63A, 40V, RDS(on)(typ.)=5.6m@VGS=10V  Low gate charge  Low Crss  Fast switching  Extreme dv/dt rated  100% avalanche tested  Pb-free lead plating  RoHS compliant  Max. junction temperature: Tjmax.
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