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SVGQ047R6NL5V-2HS - 40V N-CHANNEL MOSFET

Datasheet Summary

Description

SVGQ047R6NL5V-2HS is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology.

Features

  • AEC-Q101 qualified.
  • 65A, 40V, RDS(on)(typ. )=5.5m@VGS=10V.
  • Low gate charge.
  • Low Crss.
  • Fast switching.
  • Extreme dv/dt rated.
  • 100% avalanche tested.
  • Pb-free lead plating.
  • RoHS compliant.
  • Wettable flanks.
  • Max. junction temperature: Tjmax. =175ºC KEY.

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Datasheet preview – SVGQ047R6NL5V-2HS

Datasheet Details

Part number SVGQ047R6NL5V-2HS
Manufacturer Silan Microelectronics
File Size 422.96 KB
Description 40V N-CHANNEL MOSFET
Datasheet download datasheet SVGQ047R6NL5V-2HS Datasheet
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Full PDF Text Transcription

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Silan Microelectronics SVGQ047R6NL5V-2HS_Datasheet 65A, 40V N-CHANNEL MOSFET DESCRIPTION SVGQ047R6NL5V-2HS is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance and high avalanche breakdown tolerance. This device is widely used in 12V motor control system, Start-stop micro-hybrid and so on. FEATURES  AEC-Q101 qualified  65A, 40V, RDS(on)(typ.)=5.5m@VGS=10V  Low gate charge  Low Crss  Fast switching  Extreme dv/dt rated  100% avalanche tested  Pb-free lead plating  RoHS compliant  Wettable flanks  Max. junction temperature: Tjmax.
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