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SVGQ109R5NAD - 100V N-CHANNEL MOSFET

This page provides the datasheet information for the SVGQ109R5NAD, a member of the SVGQ109R5NAD-SilanMicroelectronics 100V N-CHANNEL MOSFET family.

Datasheet Summary

Description

SVGQ109R5NAD is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology.

Features

  • 94A, 100V, RDS(on)(typ. )=7.2m@VGS=10V.
  • Low gate charge.
  • Low Crss.
  • Fast switching.
  • Extreme dv/dt rated.
  • 100% avalanche tested.
  • Pb-free lead plating.
  • RoHS compliant.
  • Max. junction temperature: Tjmax。=175 ºC KEY.

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Datasheet preview – SVGQ109R5NAD

Datasheet Details

Part number SVGQ109R5NAD
Manufacturer Silan Microelectronics
File Size 410.32 KB
Description 100V N-CHANNEL MOSFET
Datasheet download datasheet SVGQ109R5NAD Datasheet
Additional preview pages of the SVGQ109R5NAD datasheet.

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Full PDF Text Transcription

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Silan Microelectronics SVGQ109R5NAD_Datasheet 94A, 100V N-CHANNEL MOSFET DESCRIPTION SVGQ109R5NAD is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance and high avalanche breakdown tolerance. This device is widely used in power management for UPS and Inverter Systems. 2 1 3 1.Gate 2.Drain 3.Source FEATURES  94A, 100V, RDS(on)(typ.)=7.2m@VGS=10V  Low gate charge  Low Crss  Fast switching  Extreme dv/dt rated  100% avalanche tested  Pb-free lead plating  RoHS compliant  Max.
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