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SVGQ06130PD - -60V P-CHANNEL MOSFET

Datasheet Summary

Description

SVGQ06130PD is an P-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology.

Features

  • Compliant with AEC-Q101 standards.
  • -80A, -60V, RDS(on)(typ. )=8.0m@VGS=10V.
  • Low gate charge.
  • Low Crss.
  • Fast switching.
  • Extreme dv/dt rated.
  • 100% avalanche tested.
  • Pb-free lead plating.
  • RoHS compliant.
  • Max. junction temperature: Tjmax. =175 ºC KEY.

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Datasheet preview – SVGQ06130PD

Datasheet Details

Part number SVGQ06130PD
Manufacturer Silan Microelectronics
File Size 364.26 KB
Description -60V P-CHANNEL MOSFET
Datasheet download datasheet SVGQ06130PD Datasheet
Additional preview pages of the SVGQ06130PD datasheet.

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Full PDF Text Transcription

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Silan Microelectronics SVGQ06130PD_Datasheet -80A, -60V P-CHANNEL MOSFET DESCRIPTION SVGQ06130PD is an P-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance and high avalanche breakdown tolerance. This device is widely used in power management for UPS and Inverter Systems. FEATURES  Compliant with AEC-Q101 standards.  -80A, -60V, RDS(on)(typ.)=8.0m@VGS=10V  Low gate charge  Low Crss  Fast switching  Extreme dv/dt rated  100% avalanche tested  Pb-free lead plating  RoHS compliant  Max. junction temperature: Tjmax.
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