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SVGQ042R8NL5V-2HS - 40V N-CHANNEL MOSFET

Datasheet Summary

Description

LVMOS technology.

Features

  • Compliant with AEC-Q101 standards.
  • 112A, 40V, RDS(on)(typ. )=2.3m@VGS=10V.
  • Low gate charge.
  • Low Crss.
  • Fast switching.
  • Extreme dv/dt rated.
  • 100% avalanche tested.
  • Pb-free lead plating.
  • RoHS compliant.
  • Wettable flanks.
  • Max. junction temperature: Tjmax。=175ºC KEY.

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Datasheet preview – SVGQ042R8NL5V-2HS

Datasheet Details

Part number SVGQ042R8NL5V-2HS
Manufacturer Silan Microelectronics
File Size 396.16 KB
Description 40V N-CHANNEL MOSFET
Datasheet download datasheet SVGQ042R8NL5V-2HS Datasheet
Additional preview pages of the SVGQ042R8NL5V-2HS datasheet.

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Full PDF Text Transcription

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Silan Microelectronics SVGQ042R8NL5V-2HS_Datasheet 112A, 40V N-CHANNEL MOSFET DESCRIPTION S1 8D SVGQ042R8NL5V-2HS is an N-channel enhancement mode S2 7D power MOS field effect transistor which is produced using Silan's S3 6D LVMOS technology. The improved process and cell structure have G4 5D been especially tailored to minimize on-state resistance, provide superior switching performance and high avalanche breakdown tolerance. This device is widely used in 12V automobile motor control system, Start-stop micro-hybrid and so on. FEATURES  Compliant with AEC-Q101 standards.  112A, 40V, RDS(on)(typ.)=2.3m@VGS=10V  Low gate charge  Low Crss  Fast switching  Extreme dv/dt rated  100% avalanche tested  Pb-free lead plating  RoHS compliant  Wettable flanks  Max.
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