Datasheet4U Logo Datasheet4U.com

STPSC4H065DLF - 650V power Schottky silicon carbide diode

Description

This 4 A, 650 V, SiC diode is an ultra-high performance power Schottky diode.

It is manufactured using a silicon carbide substrate.

The wide band gap material allows the design of a Schottky diode structure with a 650 V rating.

Features

  • Less than 1 mm height package.
  • High creepage package.
  • No or negligible reverse recovery.
  • Temperature independent switching behavior.
  • High forward surge capability.
  • Low drop forward voltage.
  • Power efficient product.
  • ECOPACK2 compliant component.

📥 Download Datasheet

Datasheet preview – STPSC4H065DLF

Datasheet Details

Part number STPSC4H065DLF
Manufacturer STMicroelectronics
File Size 376.68 KB
Description 650V power Schottky silicon carbide diode
Datasheet download datasheet STPSC4H065DLF Datasheet
Additional preview pages of the STPSC4H065DLF datasheet.

📁 Similar Datasheet

  • STPSC406 - 600V power Schottky silicon carbide diode (ST Microelectronics)
  • STPSC1006 - Schottky silicon carbide diode (ST Microelectronics)
  • STPSC1206 - 600V power Schottky silicon carbide diode (ST Microelectronics)
  • STPSC606 - Schottky Barrier 600 V power Schottky silicon carbide diode (ST Microelectronics)
  • STPSC806 - Schottky Barrier 600 V power Schottky silicon carbide diode (ST Microelectronics)
  • STPS0520M - LOW DROP POWER SCHOTTKY RECTIFIER (ST Microelectronics)
  • STPS0520Z - SCHOTTKY RECTIFIERS (ST Microelectronics)
  • STPS0530Z - SCHOTTKY RECTIFIERS (ST Microelectronics)
  • STPS0540Z - (STPS0540Z / STPS0560Z) SCHOTTKY RECTIFIER (ST Microelectronics)
  • STPS0560Z - SCHOTTKY RECTIFIER (ST Microelectronics)
Other Datasheets by STMicroelectronics

Full PDF Text Transcription

Click to expand full text
STPSC4H065DLF Datasheet 650 V power Schottky silicon carbide diode Product status link STPSC4H065DLF Product summary Symbol Value IF(AV) 4A VRRM 650 V VF(typ.) 1.38 V T j(max.) 175 °C Product label Features • Less than 1 mm height package • High creepage package • No or negligible reverse recovery • Temperature independent switching behavior • High forward surge capability • Low drop forward voltage • Power efficient product • ECOPACK2 compliant component Applications • Switch mode power supply • Boost PFC • Bootstrap diode • LLC clamping function • High frequency inverter applications Description This 4 A, 650 V, SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate.
Published: |