Datasheet4U Logo Datasheet4U.com

STPSC406 - 600V power Schottky silicon carbide diode

Datasheet Summary

Description

The SiC diode is an ultrahigh performance power Schottky diode.

It is manufactured using a silicon carbide substrate.

The wide bandgap material allows the design of a Schottky diode structure with a 600 V rating.

Features

  • No or negligible reverse recovery Switching behavior independent of temperature Dedicated to PFC boost diode K A K.

📥 Download Datasheet

Datasheet preview – STPSC406

Datasheet Details

Part number STPSC406
Manufacturer STMicroelectronics
File Size 124.19 KB
Description 600V power Schottky silicon carbide diode
Datasheet download datasheet STPSC406 Datasheet
Additional preview pages of the STPSC406 datasheet.

📁 Similar Datasheet

  • STPSC40H12C - 40A power Schottky silicon carbide diode (STMicroelectronics)
  • STPSC40H12C-Y - power Schottky silicon carbide diode (STMicroelectronics)
  • STPSC4H065 - 4A high surge silicon carbide power Schottky diode (STMicroelectronics)
  • STPSC4H065DLF - 650V power Schottky silicon carbide diode (STMicroelectronics)
  • STPSC10065 - Schottky silicon carbide diode (STMicroelectronics)
  • STPSC10065DLF - power Schottky silicon carbide diode (STMicroelectronics)
  • STPSC1006D - 600 V power Schottky silicon carbide diode (STMicroelectronics)
  • STPSC10H065 - power Schottky silicon carbide diode (STMicroelectronics)
  • STPSC10H065-Y - Automotive 650V power Schottky silicon carbide diode (STMicroelectronics)
  • STPSC10H065BY-TR - Schottky silicon carbide diode (STMicroelectronics)
Other Datasheets by ST Microelectronics
  • STPSC1006 - Schottky silicon carbide diode
  • STPSC1206 - 600V power Schottky silicon carbide diode
  • STPSC606 - Schottky Barrier 600 V power Schottky silicon carbide diode
  • STPSC806 - Schottky Barrier 600 V power Schottky silicon carbide diode
  • STPS0520M - LOW DROP POWER SCHOTTKY RECTIFIER
  • STPS0520Z - SCHOTTKY RECTIFIERS
  • STPS0530Z - SCHOTTKY RECTIFIERS
  • STPS0540Z - (STPS0540Z / STPS0560Z) SCHOTTKY RECTIFIER

Full PDF Text Transcription

Click to expand full text
www.DataSheet4U.com STPSC406 600 V power Schottky silicon carbide diode Features ■ ■ ■ No or negligible reverse recovery Switching behavior independent of temperature Dedicated to PFC boost diode K A K Description The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide bandgap material allows the design of a Schottky diode structure with a 600 V rating. Due to the Schottky construction no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. ST SiC diodes will boost the performance of PFC operations in hard switching conditions. TO-220AC STPSC406D K A NC DPAK STPSC406B Table 1.
Published: |