Datasheet4U Logo Datasheet4U.com

STPSC606 - Schottky Barrier 600 V power Schottky silicon carbide diode

Datasheet Summary

Description

The SiC diode is an ultrahigh performance power Schottky diode.

It is manufactured using a silicon carbide substrate.

The wide bandgap material allows the design of a Schottky diode structure with a 600 V rating.

Features

  • No or negligible reverse recovery Switching behavior independent of temperature Dedicated to PFC boost diode K A K.

📥 Download Datasheet

Datasheet preview – STPSC606

Datasheet Details

Part number STPSC606
Manufacturer STMicroelectronics
File Size 123.98 KB
Description Schottky Barrier 600 V power Schottky silicon carbide diode
Datasheet download datasheet STPSC606 Datasheet
Additional preview pages of the STPSC606 datasheet.

📁 Similar Datasheet

  • STPSC6C065-Y - Automotive 650V power Schottky silicon carbide diode (STMicroelectronics)
  • STPSC6H065 - 650V power Schottky silicon carbide diode (STMicroelectronics)
  • STPSC6H065DLF - 650V power Schottky silicon carbide diode (STMicroelectronics)
  • STPSC6TH13TI - Dual 650V power Schottky silicon carbide diode (STMicroelectronics)
  • STPSC10065 - Schottky silicon carbide diode (STMicroelectronics)
  • STPSC10065DLF - power Schottky silicon carbide diode (STMicroelectronics)
  • STPSC1006D - 600 V power Schottky silicon carbide diode (STMicroelectronics)
  • STPSC10H065 - power Schottky silicon carbide diode (STMicroelectronics)
  • STPSC10H065-Y - Automotive 650V power Schottky silicon carbide diode (STMicroelectronics)
  • STPSC10H065BY-TR - Schottky silicon carbide diode (STMicroelectronics)
Other Datasheets by ST Microelectronics
  • STPSC1006 - Schottky silicon carbide diode
  • STPSC1206 - 600V power Schottky silicon carbide diode
  • STPSC406 - 600V power Schottky silicon carbide diode
  • STPSC806 - Schottky Barrier 600 V power Schottky silicon carbide diode
  • STPS0520M - LOW DROP POWER SCHOTTKY RECTIFIER
  • STPS0520Z - SCHOTTKY RECTIFIERS
  • STPS0530Z - SCHOTTKY RECTIFIERS
  • STPS0540Z - (STPS0540Z / STPS0560Z) SCHOTTKY RECTIFIER

Full PDF Text Transcription

Click to expand full text
www.DataSheet4U.com STPSC606 600 V power Schottky silicon carbide diode Features ■ ■ ■ No or negligible reverse recovery Switching behavior independent of temperature Dedicated to PFC boost diode K A K Description The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide bandgap material allows the design of a Schottky diode structure with a 600 V rating. Due to the Schottky construction no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. ST SiC diodes will boost the performance of PFC operations in hard switching conditions. TO-220AC STPSC606D K A NC D2PAK STPSC606G Table 1.
Published: |