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STPSC6TH13TI - Dual 650V power Schottky silicon carbide diode

Datasheet Summary

Description

The SiC diode is an ultrahigh performance power Schottky diode.

It is manufactured using a silicon carbide substrate.

The wide band gap material allows the design of a Schottky diode structure with a 650 V rating.

Features

  • No or negligible reverse recovery.
  • Switching behavior independent of temperature.
  • Suited for specific bridge-less topologies.
  • High forward surge capability.
  • Insulated package:.
  • Capacitance: 7 pF.
  • Insulated voltage: 2500 V rms Datasheet - production data.

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Datasheet preview – STPSC6TH13TI

Datasheet Details

Part number STPSC6TH13TI
Manufacturer STMicroelectronics
File Size 170.14 KB
Description Dual 650V power Schottky silicon carbide diode
Datasheet download datasheet STPSC6TH13TI Datasheet
Additional preview pages of the STPSC6TH13TI datasheet.

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STPSC6TH13TI Dual 650 V power Schottky silicon carbide diode in series    ,QVXODWHG72$%  Features  No or negligible reverse recovery  Switching behavior independent of temperature  Suited for specific bridge-less topologies  High forward surge capability  Insulated package: – Capacitance: 7 pF – Insulated voltage: 2500 V rms Datasheet - production data Description The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.
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