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STPSC10H065 - power Schottky silicon carbide diode

Datasheet Summary

Description

This 10 A, 650 V SiC diode is an ultrahigh performance power Schottky diode.

It is manufactured using a silicon carbide substrate.

The wide band gap material allows the design of a Schottky diode structure with a 650 V rating.

Features

  • No reverse recovery charge in.

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Datasheet preview – STPSC10H065

Datasheet Details

Part number STPSC10H065
Manufacturer STMicroelectronics
File Size 396.57 KB
Description power Schottky silicon carbide diode
Datasheet download datasheet STPSC10H065 Datasheet
Additional preview pages of the STPSC10H065 datasheet.

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Full PDF Text Transcription

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STPSC10H065 Datasheet 650 V, 10 A high surge silicon carbide power Schottky diode A K K TO-220AC K A K A K TO-220AC insulated K D²PAK A NC DPAK A NC Features • No reverse recovery charge in application current range • Switching behavior independent of temperature • High forward surge capability • Insulated package TO-220AC Ins: – Insulated voltage: 2500 VRMS – Typical package capacitance: 7 pF • Power efficient product • ECOPACK®2 compliant component Applications • Switch mode power supply • PFC • DCDC converters • LLC topologies • Boost diode Product status STPSC10H065 Product summary Symbol Value IF(AV) 10 A VRRM 650 V Tj(max.) 175 °C Product label Description This 10 A, 650 V SiC diode is an ultrahigh performance power Schottky diode.
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