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STPSC10H12 - power Schottky silicon carbide diode

Description

The SiC diode, available in TO-220AC, DPAK HV, D²PAK and DO-247 LL, is an ultrahigh performance power Schottky rectifier.

It is manufactured using a silicon carbide substrate.

The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating.

Features

  • No or negligible reverse recovery.
  • Switching behavior independent of temperature.
  • Robust high voltage periphery.
  • Operating from -40 °C to 175 °C.
  • Low VF.

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Datasheet preview – STPSC10H12

Datasheet Details

Part number STPSC10H12
Manufacturer STMicroelectronics
File Size 426.28 KB
Description power Schottky silicon carbide diode
Datasheet download datasheet STPSC10H12 Datasheet
Additional preview pages of the STPSC10H12 datasheet.

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Full PDF Text Transcription

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STPSC10H12 Datasheet 1200 V power Schottky silicon carbide diode A K A K TO-220AC K K K A K DPAK HV 2L K DO-247 LL A K A NC D²PAK Features • No or negligible reverse recovery • Switching behavior independent of temperature • Robust high voltage periphery • Operating from -40 °C to 175 °C • Low VF • ECOPACK®2 compliant Description The SiC diode, available in TO-220AC, DPAK HV, D²PAK and DO-247 LL, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.
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