STPSC10H12G2Y-TR Datasheet PDF (silicon carbide power Schottky diode) | Download STMicroelectronics STPSC10H12G2Y-TR

STPSC10H12G2Y-TR - silicon carbide power Schottky diode

Description

This 10 A, 1200 V SiC diode is an ultra-high performance power Schottky diode.

It is manufactured using a silicon carbide substrate.

The wide band gap material allows the design of a Schottky diode structure with a 1200 V rating.

Features

AEC-Q101 qualified.
No or negligible reverse recovery.
Switching behavior independent of temperature.
Robust high voltage periphery.
PPAP capable.
Operating Tj from -40 °C to 175 °C.
Low VF.
D²PAK HV creepage distance (anode to cathode) = 5.38 mm min.
ECOPACK2 compliant.

Datasheet Details

Part number	STPSC10H12G2Y-TR
Manufacturer	STMicroelectronics
File Size	372.40 KB
Description	silicon carbide power Schottky diode
Datasheet	STPSC10H12G2Y-TR Datasheet
Additional preview pages of the STPSC10H12G2Y-TR datasheet.

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Full PDF Text Transcription

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STPSC10H12G2Y-TR Datasheet Automotive 1200 V, 10 A, silicon carbide power Schottky diode A1 K K A A NC D²PAK HV Product label Product status link STPSC10H12G2Y-TR Product summary IF(AV) 10 A VRRM 1200 V Tj (max.) 175 °C VF (typ.) 1.35 V Features • AEC-Q101 qualified • No or negligible reverse recovery • Switching behavior independent of temperature • Robust high voltage periphery • PPAP capable • Operating Tj from -40 °C to 175 °C • Low VF • D²PAK HV creepage distance (anode to cathode) = 5.38 mm min. • ECOPACK2 compliant Applications • On board charger (OBC) • DC/DC • PFC Description This 10 A, 1200 V SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate.

Published: Mar 14, 2023 |