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STPSC1206 - 600V power Schottky silicon carbide diode

Datasheet Summary

Description

These diodes are manufactured using silicon carbide substrate.

This wide bandgap material supports the manufacture of a Schottky diode structure with a high voltage rating.

Such diodes exhibit no or negligible recovery characteristics.

Features

  • No reverse recovery Switching behavior independent of temperature Dedicated to PFC boost diode.

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Datasheet Details

Part number STPSC1206
Manufacturer STMicroelectronics
File Size 108.33 KB
Description 600V power Schottky silicon carbide diode
Datasheet download datasheet STPSC1206 Datasheet
Additional preview pages of the STPSC1206 datasheet.

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www.DataSheet4U.com STPSC1206 600 V power Schottky silicon carbide diode Features ■ ■ ■ No reverse recovery Switching behavior independent of temperature Dedicated to PFC boost diode Description These diodes are manufactured using silicon carbide substrate. This wide bandgap material supports the manufacture of a Schottky diode structure with a high voltage rating. Such diodes exhibit no or negligible recovery characteristics. The recovery characteristics are independent of the temperature. Using these diodes will significantly reduce the switching power losses of the associated MOSFET, and thus increase the efficiency of the overall application. These diodes will then outperform the power factor correction circuit operating in hard switching conditions.
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