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STPSC12065 - 650V power Schottky silicon carbide diode

Description

The SiC diode is an ultra high performance power Schottky diode.

It is manufactured using a silicon carbide substrate.

The wide band gap material allows the design of a Schottky diode structure with a 650 V rating.

Features

  • No or negligible reverse recovery.
  • Switching behavior independent of temperature.
  • Dedicated to PFC.

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Datasheet preview – STPSC12065

Datasheet Details

Part number STPSC12065
Manufacturer STMicroelectronics
File Size 433.74 KB
Description 650V power Schottky silicon carbide diode
Datasheet download datasheet STPSC12065 Datasheet
Additional preview pages of the STPSC12065 datasheet.

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STPSC12065 Datasheet 650 V, 12 A power Schottky silicon carbide diode K K KA NC D²PAK K A K AA NC D²PAK HV A K TO-220AC Product label Features • No or negligible reverse recovery • Switching behavior independent of temperature • Dedicated to PFC applications • High forward surge capability • Operating Tj from -40 °C to 175 °C • D²PAK HV creepage distance (anode to cathode) = 5.38 mm min. • ECOPACK2 compliant • Power efficient product Applications • DC/DC converter • High frequency inverter • Snubber • Boost PFC function Description The SiC diode is an ultra high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating.
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