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STPSC12H065 - 650V power Schottky silicon carbide diode

Description

The SiC diode is an ultrahigh performance power Schottky diode.

It is manufactured using a silicon carbide substrate.

The wide band gap material allows the design of a Schottky diode structure with a 650 V rating.

Features

  • No or negligible reverse recovery.
  • Switching behavior independent of temperature.
  • Dedicated to PFC.

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Datasheet preview – STPSC12H065

Datasheet Details

Part number STPSC12H065
Manufacturer STMicroelectronics
File Size 99.72 KB
Description 650V power Schottky silicon carbide diode
Datasheet download datasheet STPSC12H065 Datasheet
Additional preview pages of the STPSC12H065 datasheet.

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Full PDF Text Transcription

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STPSC12H065 650 V power Schottky silicon carbide diode $. . 72$& $ . Features • No or negligible reverse recovery • Switching behavior independent of temperature • Dedicated to PFC applications • High forward surge capability Datasheet - production data Description The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. Especially suited for use in PFC applications, this ST SiC diode will boost the performance in hard switching conditions.
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