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STPSC10H065G2 - high surge silicon carbide power Schottky diode

Description

This 10 A, 650 V SiC diode is an ultrahigh performance power Schottky diode.

It is manufactured using a silicon carbide substrate.

The wide band gap material allows the design of a Schottky diode structure with a 650 V rating.

Features

  • No or negligible reverse recovery.
  • Switching behavior independent of temperature.
  • High forward surge capability.
  • Operating Tj from -40 °C to 175 °C.
  • Power efficient product.
  • D²PAK HV creepage distance (anode to cathode) = 5.38 mm min.
  • ECOPACK2 compliant component.

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Datasheet preview – STPSC10H065G2

Datasheet Details

Part number STPSC10H065G2
Manufacturer STMicroelectronics
File Size 377.74 KB
Description high surge silicon carbide power Schottky diode
Datasheet download datasheet STPSC10H065G2 Datasheet
Additional preview pages of the STPSC10H065G2 datasheet.

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Full PDF Text Transcription

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STPSC10H065G2 Datasheet 650 V, 10 A high surge silicon carbide power Schottky diode A K K A A NC D²PAK HV Product label Product status STPSC10H065G2 Product summary Symbol Value IF(AV) 10 A VRRM 650 V Tj(max.) 175 °C VF(typ.) 1.38 V Features • No or negligible reverse recovery • Switching behavior independent of temperature • High forward surge capability • Operating Tj from -40 °C to 175 °C • Power efficient product • D²PAK HV creepage distance (anode to cathode) = 5.38 mm min. • ECOPACK2 compliant component Applications • Telecom power supply • Server power supply • Switch mode power supply • DCDC converters • LLC topologies Description This 10 A, 650 V SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate.
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