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STPSC40H12C - 40A power Schottky silicon carbide diode

Description

The SiC diode, available in TO-247 LL, is an ultrahigh performance power Schottky rectifier.

It is manufactured using a silicon carbide substrate.

The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating.

Features

  • None or negligible reverse recovery.
  • Switching behavior independent of temperature.
  • Robust high voltage periphery.
  • Operating Tj from -40 °C to 175 °C.
  • ECOPACK2 compliant component.

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Datasheet preview – STPSC40H12C

Datasheet Details

Part number STPSC40H12C
Manufacturer STMicroelectronics
File Size 436.26 KB
Description 40A power Schottky silicon carbide diode
Datasheet download datasheet STPSC40H12C Datasheet
Additional preview pages of the STPSC40H12C datasheet.

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STPSC40H12C Datasheet 1200 V, 40 A power Schottky silicon carbide diode A1 K A2 TO-247 LL A2 K A1 Product label Product status link STPSC40H12C Features • None or negligible reverse recovery • Switching behavior independent of temperature • Robust high voltage periphery • Operating Tj from -40 °C to 175 °C • ECOPACK2 compliant component Applications • Solar inverter • Boost PFC • Air conditioning equipment • UPS power supply • Telecom / Server power equipment • HEV/EV OBC (On board battery chargers) • EV Charging station Description The SiC diode, available in TO-247 LL, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating.
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