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STPSC4H065 - 4A high surge silicon carbide power Schottky diode

Description

This 4 A, 650 V SiC diode is an ultrahigh performance power Schottky diode.

It is manufactured using a silicon carbide substrate.

The wide band gap material allows the design of a Schottky diode structure with a 650 V rating.

Features

  • No reverse recovery charge in.

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Datasheet Details

Part number STPSC4H065
Manufacturer STMicroelectronics
File Size 317.48 KB
Description 4A high surge silicon carbide power Schottky diode
Datasheet download datasheet STPSC4H065 Datasheet
Additional preview pages of the STPSC4H065 datasheet.

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Full PDF Text Transcription

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STPSC4H065 Datasheet 650 V, 4 A high surge silicon carbide power Schottky diode TO-220AC DPAK TO-220AC ins. Features • No reverse recovery charge in application current range • Switching behavior independent of temperature • High forward surge capability • Insulated package TO-220AC Ins: – Insulated voltage: 2500 VRMS – Typical package capacitance: 7 pF • Power efficient product • ECOPACK®2 compliant component Applications • Switch mode power supply • PFC • DCDC converters • LLC topologies • Boost diode Product status STPSC4H065 Product summary Symbol Value IF(AV) 4A VRRM 650 V Tj(max.) 175 °C Product label Description This 4 A, 650 V SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate.
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