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STN1HNK60, STQ1HNK60R-AP
Datasheet
N-channel 600 V, 7.3 Ω typ., 0.4 A SuperMESH™ Power MOSFETs in a SOT-223 and TO-92 packages
4 1 23
SOT-223
3 2 1
TO-92 (Ammopack)
D(2, 4)
Features
Order code
VDS
STN1HNK60 STQ1HNK60R-AP
600 V
• Extremely high dv/dt capability • 100% avalanche tested • Gate charge minimized
Applications
• Switching applications
RDS(on) max. 8.5 Ω
ID 0.4 A
Package SOT-223
TO-92
Description
G(1) These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH™ technology by STMicroelectronics, an optimization of the well-established PowerMESH™.