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STN1NF20
N-channel 200 V, 1.1 Ω, 1 A SOT-223 STripFET™ II Power MOSFET
Features
Order code STN1NF20
VDSS 200 V
RDS(on) max < 1.5 Ω
■ 100% avalanche tested ■ Low gate charge ■ Exceptional dv/dt capability
ID 1A
Applications
■ Switching applications
Description
This Power MOSFET has been developed using STMicroelectronics’ unique STripFET™ process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements.
4 3
2 1 SOT-223
Figure 1. Internal schematic diagram
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Table 1.
STN1NF20 Datasheet
