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STN1HNC60 - N-CHANNEL MOSFET

Description

The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™.

area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness.

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Datasheet preview – STN1HNC60

Datasheet Details

Part number STN1HNC60
Manufacturer STMicroelectronics
File Size 200.51 KB
Description N-CHANNEL MOSFET
Datasheet download datasheet STN1HNC60 Datasheet
Additional preview pages of the STN1HNC60 datasheet.

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Full PDF Text Transcription

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www.DataSheet4U.com N-CHANNEL 600V - 7Ω - 0.4A - SOT-223 PowerMesh™II MOSFET TYPE STN1HNC60 s s s s s STN1HNC60 VDSS 600 V RDS(on) <8Ω ID 0.4 A TYPICAL RDS(on) = 7Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED 2 1 SOT-223 2 3 DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness.
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