NTBG060N090SC1 - SiC MOSFET

Features

Typ. RDS(on) = 60 mW @ VGS = 15 V.
Typ. RDS(on) = 43 mW @ VGS = 18 V.
Ultra Low Gate Charge (QG(tot) = 88 nC).
High Speed Switching with Low Capacitance (Coss = 115 pF).
100% Avalanche Tested.
TJ = 175°C.
This Device is Halide Free and RoHS Compliant with exemption 7a, Pb.
Free 2LI (on second level interconnection) Typical.

onsemi

Datasheet Details

Part number	NTBG060N090SC1
Manufacturer	onsemi
File Size	787.40 KB
Description	SiC MOSFET
Datasheet	NTBG060N090SC1 Datasheet
Additional preview pages of the NTBG060N090SC1 datasheet.

📁 Similar Datasheet

NTB0101 - Dual supply translating transceiver (NXP)
NTB0101A - Auto direction sensing dual supply (NXP)
NTB0102 - Dual supply translating transceiver (NXP)
NTB0102-Q100 - Dual supply translating transceiver (NXP)
NTB0104 - Dual supply translating transceiver (NXP)
NTB0104-Q100 - Dual supply translating transceiver (NXP)
NTB082N65S3F - N-Channel MOSFET (INCHANGE)
NTB125N02R - Power MOSFET (ON)
NTB27N06 - Power MOSFET (ON)
NTB27N06T4 - Power MOSFET (ON)

Other Datasheets by ON Semiconductor

NTBG060N065SC1 - SiC MOSFET
NTBG014N120M3P - SiC MOSFET
NTBG015N065SC1 - SiC MOSFET
NTBG020N090SC1 - SiC MOSFET
NTBG020N120SC1 - SiC MOSFET
NTBG025N065SC1 - SiC MOSFET
NTBG028N170M1 - SiC MOSFET
NTBG040N120M3S - SiC MOSFET

Full PDF Text Transcription

Click to expand full text

DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET – EliteSiC, 60 mohm, 900 V, M2, D2PAK-7L NTBG060N090SC1 Features • Typ. RDS(on) = 60 mW @ VGS = 15 V • Typ.

Published: Apr 30, 2021 |