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MOSFET – Power, N-Channel
100 V, 42 A, 28 mW
NTB6413AN, NTP6413AN, NVB6413AN
Features
Low RDS(on) High Current Capability 100% Avalanche Tested NVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (TJ = 25C Unless otherwise specified)
Symbol
Parameter
Value Unit
VDSS Drain−to−Source Voltage
100
V
VGS Gate−to−Source Voltage − Continuous
$20
V
ID
Continuous Drain
Steady TC = 25C
42
A
Current RqJC
State
TC = 100C
28
PD Power Dissipation
Steady TC = 25C
136
W
RqJC
State
IDM Pulsed Drain Current
tp = 10 ms
178
A
TJ, Tstg Operating Junction and Storage Temperature −55 to C
Range
+175
IS
Source Cur
NTB6413AN Datasheet
