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NTB082N65S3F - Power MOSFET

Datasheet Summary

Description

voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.

Features

  • 700 V @ TJ = 150°C.
  • Typ. RDS(on) = 70 mW.
  • Ultra Low Gate Charge (Typ. Qg = 81 nC).
  • Low Effective Output Capacitance (Typ. Coss(eff. ) = 722 pF).
  • 100% Avalanche Tested.
  • These Devices are Pb.
  • Free and are RoHS Compliant.

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Datasheet Details

Part number NTB082N65S3F
Manufacturer ON Semiconductor
File Size 302.57 KB
Description Power MOSFET
Datasheet download datasheet NTB082N65S3F Datasheet
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NTB082N65S3F Power MOSFET, N‐Channel, SUPERFET) III, FRFET), 650 V, 40 A, 82 mW Description SUPERFET III MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for the various power system for miniaturization and higher efficiency. SUPERFET III FRFET MOSFET’s optimized reverse recovery performance of body diode can remove additional component and improve system reliability. Features • 700 V @ TJ = 150°C • Typ. RDS(on) = 70 mW • Ultra Low Gate Charge (Typ.
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