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MOSFET - Power, N-Channel
100 V, 76 A, 13 mW
NTB6410AN, NTP6410AN, NVB6410AN
Features
Low RDS(on) High Current Capability 100% Avalanche Tested NVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (TJ = 25C Unless otherwise specified)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
VDSS
100
V
Gate−to−Source Voltage − Continuous
VGS
$20
V
Continuous Drain
Steady TC = 25C
ID
Current RqJC
State TC = 100C
76
A
54
Power Dissipation
Steady TC = 25C
PD
RqJC
State
188
W
Pulsed Drain Current
tp = 10 ms
IDM
305
A
Operating Junction and Storage Temperature TJ, Tstg −55 to C
Range
+175
Source Curre
NTB6410AN Datasheet
