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NTB6411AN, NTP6411AN, NVB6411AN
N-Channel Power MOSFET 100 V, 77 A, 14 mW
Features
• Low RDS(on) • High Current Capability • 100% Avalanche Tested • NVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (TJ = 25°C Unless otherwise specified)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
VDSS
100
V
Gate−to−Source Voltage − Continuous
VGS
$20
V
Continuous Drain
Steady TC = 25°C
ID
Current RqJC
State TC = 100°C
77
A
54
Power Dissipation
Steady TC = 25°C
PD
RqJC
State
217
W
Pulsed Drain Current
tp = 10 ms
IDM
285
A
Operating Junction and Storage Temperature TJ, Tstg −55 to °C
Range
+175
Source Current
NTB6411AN Datasheet
