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NTB011N15MC - N-Channel MOSFET

Datasheet Summary

Features

  • Shielded Gate MOSFET Technology.
  • Max RDS(on) = 10.9 mW at VGS = 10 V, ID = 41 A.
  • 50% Lower Qrr than other MOSFET Suppliers.
  • Lowers Switching Noise/EMI.
  • 100% UIL Tested.
  • These Devices are Pb.
  • Free, Halogen Free/BFR Free and are RoHS Compliant Typical.

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Datasheet Details

Part number NTB011N15MC
Manufacturer ON Semiconductor
File Size 152.43 KB
Description N-Channel MOSFET
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MOSFET - N-Channel Shielded Gate PowerTrench[ 150 V, 10.9 mW, 75.4 A NTB011N15MC Features • Shielded Gate MOSFET Technology • Max RDS(on) = 10.9 mW at VGS = 10 V, ID = 41 A • 50% Lower Qrr than other MOSFET Suppliers • Lowers Switching Noise/EMI • 100% UIL Tested • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applications • Synchronous Rectification for ATX / Server / Telecom PSU • Motor Drives and Uninterruptible Power Supplies • Micro Solar Inverter MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 150 V Gate−to−Source Voltage VGS ±20 V Continuous Drain ID 75.4 A Current RqJC (Note 2) Steady Power Dissipation State TC = 25°C PD 136.
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