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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ626
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
DESCRIPTION
The 2SJ626 is a switching device which can be driven directly by a 4.0 V power source. The 2SJ626 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on.
PACKAGE DRAWING (Unit: mm)
0.4 +0.1 –0.05
0.65–0.15
+0.1
0.16+0.1 –0.06
2.8 ±0.2
3
1.5
FEATURES
• 4.0 V drive available • Low on-state resistance RDS(on)1 = 388 mΩ MAX. (VGS = –10 V, ID = –1.0 A) RDS(on)2 = 514 mΩ MAX. (VGS = –4.5 V, ID = –1.0 A) RDS(on)3 = 556 mΩ MAX. (VGS = –4.0 V, ID = –1.0 A)
0 to 0.1
1 2
0.95
0.95
0.65 0.9 to 1.1
1.9 2.9 ±0.2 1 : Gate 2 : Source 3 : Drain
ORDERING INFORMATION
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2SJ626 Datasheet
