Datasheet4U Logo Datasheet4U.com

2SJ628 - P-Channel Silicon MOSFET

Datasheet Summary

Features

  • Package Dimensions unit : mm 2062A [2SJ628] 4.5 1.6 1.5 Low ON-resistance. Ultrahigh-speed switching. 1.8V drive. 0.5 3 1.5 2 3.0 (Bottom view) 1 1.0 0.4 2.5 4.25max 0.4 0.75 1 : Gate 2 : Drain 3 : Source SANYO : PCP Specifications Absolute Maximum Ratings at Ta=25°C Parameter www. DataSheet4U. com Symbol VDSS VGSS ID IDP PD Tch Tstg Conditions Ratings --12 ±8 --2.5 Unit V V A A W W °C °C Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC.

📥 Download Datasheet

Datasheet preview – 2SJ628

Datasheet Details

Part number 2SJ628
Manufacturer Sanyo Semicon
File Size 60.74 KB
Description P-Channel Silicon MOSFET
Datasheet download datasheet 2SJ628 Datasheet
Additional preview pages of the 2SJ628 datasheet.

📁 Similar Datasheet

  • 2SJ620 - TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2--MOSV) (Toshiba Semiconductor)
  • 2SJ621 - MOS FIELD EFFECT TRANSISTOR (NEC)
  • 2SJ624 - MOS FIELD EFFECT TRANSISTOR (NEC)
  • 2SJ625 - MOS FIELD EFFECT TRANSISTOR (NEC)
  • 2SJ626 - MOS FIELD EFFECT TRANSISTOR (NEC)
  • 2SJ629 - P-Channel MOSFET (Sanyo Semicon Device)
  • 2SJ600 - SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE (NEC)
  • 2SJ600 - MOSFET (Kexin)
  • 2SJ601 - P-Channel Power MOSFET (NEC)
  • 2SJ601 - MOSFET (Kexin)
Other Datasheets by Sanyo Semicon

    Full PDF Text Transcription

    Click to expand full text
    Ordering number : ENN7271 2SJ628 P-Channel Silicon MOSFET 2SJ628 Ultrahigh-Speed Switching Applications Preliminary Features • • • Package Dimensions unit : mm 2062A [2SJ628] 4.5 1.6 1.5 Low ON-resistance. Ultrahigh-speed switching. 1.8V drive. 0.5 3 1.5 2 3.0 (Bottom view) 1 1.0 0.4 2.5 4.25max 0.4 0.75 1 : Gate 2 : Drain 3 : Source SANYO : PCP Specifications Absolute Maximum Ratings at Ta=25°C Parameter www.DataSheet4U.com Symbol VDSS VGSS ID IDP PD Tch Tstg Conditions Ratings --12 ±8 --2.5 Unit V V A A W W °C °C Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature PW≤10µs, duty cycle≤1% Mounted on a ceramic board (250mm2!0.8mm) Tc=25°C --10 1.0 3.
    Published: |