2SJ620 - TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2--MOSV)

Toshiba Semiconductor

Datasheet Details

Part number	2SJ620
Manufacturer	Toshiba Semiconductor
File Size	225.54 KB
Description	TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2--MOSV)
Datasheet	2SJ620 Datasheet
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2SJ620 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2-π-MOSV) 2SJ620 Switching Regulator and DC-DC Converter Applications Motor Drive Applications · · · · · 4-V gate drive Low drain-source ON resistance: RDS (ON) = 63 mΩ (typ.) High forward transfer admittance: |Yfs| = 15 S (typ.) Low leakage current: IDSS = −100 µA (max) (VDS = −100 V) Enhancement-model: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kW) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating -100 -100 ±20 -18 -72 125 937 -18 12.

Published: Mar 30, 2005 |