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NCEP02T10T - N-Channel Super Trench Power MOSFET

Datasheet Summary

Description

The NCEP02T10T uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance.

Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.

Features

  • VDS =200V,ID =100A RDS(ON).

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Datasheet Details

Part number NCEP02T10T
Manufacturer NCE Power Semiconductor
File Size 326.58 KB
Description N-Channel Super Trench Power MOSFET
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Full PDF Text Transcription

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http://www.ncepower.com Pb Free Product NCEP02T10T NCE N-Channel Super Trench Power MOSFET Description The NCEP02T10T uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification.
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