Datasheet Details
| Part number | NCEP023N85 |
|---|---|
| Manufacturer | NCE Power Semiconductor |
| File Size | 408.76 KB |
| Description | N-Channel Power MOSFET |
| Datasheet |
 NCEP023N85 Datasheet
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General Description
The series of devices uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance.
Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.
Key Features
- VDS =85V,ID =260A RDS(ON)=2.0mΩ , typical (TO-220)@ VGS=10V RDS(ON)=1.8mΩ , typical (TO-263)@ VGS=10V.
- Excellent gate charge x RDS(on) product(FOM).
- Very low on-resistance RDS(on).
- 175 °C operating temperature.
- Pb-free lead plating 100% UIS TESTED! 100% ∆Vds TESTED! TO-220 TO-263 Schematic Diagram Package Marking and Ordering Information Device Marking Device Device Package NCEP023N85 NCEP023N85 TO-220 NCEP023N85D NCEP023N85D TO-263 Reel Size - Tape width.