• Part: NCEP020N30QU
  • Description: N-Channel Super Trench II Power MOSFET
  • Category: MOSFET
  • Manufacturer: NCE Power Semiconductor
  • Size: 879.43 KB
Download NCEP020N30QU Datasheet PDF
NCE Power Semiconductor
NCEP020N30QU
Description The series of devices uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low bination of General Features - VDS =30V,ID =70A RDS(ON)=1.75mΩ (typical) @ VGS=10V RDS(ON)=3.0mΩ (typical) @ VGS=4.5V RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification. Application - DC/DC Converter - Ideal for high-frequency switching and synchronous rectification - Excellent gate charge x RDS(on) product(FOM) - Very low on-resistance RDS(on) - 150 °C operating temperature y - Pb-free lead plating l 100% UIS TESTED! On100% ΔVds TESTED! DFN 3.3X3.3 Use times Top View Bottom View Schematic Diagram heng Package Marking and Ordering Information s Device Marking Device Device Package g NCEP020N30QU NCEP020N30QU DFN3.3X3.3-8L Reel Size - Tape width - Ton Absolute Maximum Ratings...